K60P100M100SF2RM Datasheet, PDF (651/1809 Pages) Freescale Semiconductor, Inc – K60 Sub-Family Reference Manual

Chapter 28 Flash Memory Module (FTFL)
28.4.8 Read While Write (RWW)
The following simultaneous accesses are allowed for devices with FlexNVM:
• The user may read from the program flash memory while commands (typically
program and erase operations) are active in the data flash and FlexRAM memory
space.
• The MCU can fetch instructions from program flash during both data flash program
and erase operations and while EEPROM backup data is maintained by the
EEPROM commands.
• Conversely, the user may read from data flash and FlexRAM while program and
erase commands are executing on the program flash.
• When configured as traditional RAM, writes to the FlexRAM are allowed during
program and data flash operations.
Simultaneous data flash operations and FlexRAM writes, when FlexRAM is used for
EEPROM, are not possible.
The following simultaneous accesses are allowed for devices with program flash only:
• The user may read from one logical program flash memory space while commands
(typically program and erase operations) are active in the other logical program flash
memory space.
Simultaneous operations are further discussed in Allowed Simultaneous Flash
Operations.
28.4.9 Flash Program and Erase
All flash functions except read require the user to setup and launch an FTFL command
through a series of peripheral bus writes. The user cannot initiate any further FTFL
commands until notified that the current command has completed. The FTFL command
structure and operation are detailed in FTFL Command Operations.
28.4.10 FTFL Command Operations
FTFL command operations are typically used to modify flash memory contents. The next
sections describe:
K60 Sub-Family Reference Manual, Rev. 6, Nov 2011
Freescale Semiconductor, Inc.
651