K60P100M100SF2RM Datasheet, PDF (619/1809 Pages) Freescale Semiconductor, Inc – K60 Sub-Family Reference Manual

Chapter 28
Flash Memory Module (FTFL)
28.1 Introduction
NOTE
For the chip-specific implementation details of this module's
instances see the chip configuration chapter.
The FTFL module includes the following accessible memory regions:
• Program flash memory for vector space and code store
• For FlexNVM devices: FlexNVM for data store and additional code store
• For FlexNVM devices: FlexRAM for high-endurance data store or traditional RAM
• For program flash only devices: Programming acceleration RAM to speed flash
programming
Flash memory is ideal for single-supply applications, permitting in-the-field erase and
reprogramming operations without the need for any external high voltage power sources.
The FTFL module includes a memory controller that executes commands to modify flash
memory contents. An erased bit reads '1' and a programmed bit reads '0'. The
programming operation is unidirectional; it can only move bits from the '1' state (erased)
to the '0' state (programmed). Only the erase operation restores bits from '0' to '1'; bits
cannot be programmed from a '0' to a '1'.
CAUTION
A flash memory location must be in the erased state before
being programmed. Cumulative programming of bits (back-to-
back program operations without an intervening erase) within a
flash memory location is not allowed. Re-programming of
existing 0s to 0 is not allowed as this overstresses the device.
K60 Sub-Family Reference Manual, Rev. 6, Nov 2011
Freescale Semiconductor, Inc.
619