K60P100M100SF2RM Datasheet, PDF (646/1809 Pages) Freescale Semiconductor, Inc – K60 Sub-Family Reference Manual

Functional Description
configured for EEPROM (see Set FlexRAM Function Command). The EEPROM
partition grows upward from the bottom of the FlexRAM address space.
2. Data flash partition (DEPART) — The amount of FlexNVM memory used for data
flash can be programmed from 0 bytes (all of the FlexNVM block is available for
EEPROM backup) to the maximum size of the FlexNVM block (see Table 28-4).
3. FlexNVM EEPROM partition — The amount of FlexNVM memory used for
EEPROM backup, which is equal to the FlexNVM block size minus the data flash
memory partition size. The EEPROM backup size must be at least 16 times the
EEPROM partition size in FlexRAM.
4. EEPROM split factor (EEESPLIT) — The FlexRAM partitioned for EEPROM can
be divided into two subsystems, each backed by half of the partitioned EEPROM
backup. One subsystem (A) is 1/8, 1/4, or 1/2 of the partitioned FlexRAM with the
remainder belonging to the other subsystem (B).
The partition information (EEESIZE, DEPART, EEESPLIT) is stored in the data flash
IFR and is programmed using the Program Partition command (see Program Partition
Command). Typically, the Program Partition command is executed only once in the
lifetime of the device.
Data flash memory is useful for applications that need to quickly store large amounts of
data or store data that is static. The EEPROM partition in FlexRAM is useful for storing
smaller amounts of data that will be changed often. The EEPROM partition in FlexRAM
can be further sub-divided to provide subsystems, each backed by the same amount of
EEPROM backup with subsystem A having higher endurance if the split factor is 1/8 or
1/4.
K60 Sub-Family Reference Manual, Rev. 6, Nov 2011
646
Freescale Semiconductor, Inc.