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K60P100M100SF2RM Datasheet, PDF (621/1809 Pages) Freescale Semiconductor, Inc – K60 Sub-Family Reference Manual | |||
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Chapter 28 Flash Memory Module (FTFL)
⢠Section programming for faster bulk programming times
⢠Read access to data flash memory possible while programming or erasing data in the
program flash memory
28.1.1.3 Program Acceleration RAM Features
⢠For devices with only program flash memory: RAM to support section programming
28.1.1.4 FlexRAM Features
For devices with FlexNVM memory:
⢠Memory that can be used as traditional RAM or as high-endurance EEPROM storage
⢠Up to 4 Kbytes of FlexRAM configured for EEPROM or traditional RAM operations
⢠When configured for EEPROM:
⢠Protection scheme prevents accidental program or erase of data written for
EEPROM
⢠Built-in hardware emulation scheme to automate EEPROM record maintenance
functions
⢠Programmable EEPROM data set size and FlexNVM partition code facilitating
EEPROM memory endurance trade-offs
⢠Supports FlexRAM aligned writes of 1, 2, or 4 bytes at a time
⢠Read access to FlexRAM possible while programming or erasing data in the
program or data flash memory
⢠When configured for traditional RAM:
⢠Read and write access possible to the FlexRAM while programming or erasing
data in the program or data flash memory
28.1.1.5 Other FTFL Module Features
⢠Internal high-voltage supply generator for flash memory program and erase
operations
K60 Sub-Family Reference Manual, Rev. 6, Nov 2011
Freescale Semiconductor, Inc.
621
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