SH7059 Datasheet, PDF (817/1042 Pages) Renesas Technology Corp – 32-Bit RISC Microcomputer

Section 25 ROM (SH7059)
25. ROM (SH7059)
25.1 Features
This LSI has 1.5-Mbyte on-chip flash memory. The flash memory has the following features.
• Two flash-memory MATs according to LSI initiation mode
The on-chip flash memory has two memory spaces in the same address space (hereafter referred to as memory MATs).
The mode setting in the initiation determines which memory MAT is initiated first. The MAT can be switched by
using the bank-switching method after initiation.
⎯ The user MAT is initiated at a power-on reset in user mode: 1.5 Mbyte
⎯ The user boot MAT is initiated at a power-on reset in user boot mode: 12 Kbytes
• Three on-board programming modes and one off-board programming mode
⎯ On-board programming modes
Boot Mode: This mode is a program mode that uses an on-chip SCI interface. The user MAT and user boot MAT can
be programmed. This mode can automatically adjust the bit rate between the host and this LSI.
User Program Mode: The user MAT can be programmed by using the optional interface.
User Boot Mode: The user boot program of the optional interface can be made and the user MAT can be programmed.
⎯ Off-board programming mode
Programmer Mode: This mode uses the PROM programmer. The user MAT and user boot MAT can be programmed.
• Programming/erasing interface by the download of on-chip program
This LSI has a dedicated programming/erasing program. After downloading this program to the on-chip RAM,
programming/erasing can be performed by setting the argument parameter. The user branch is also supported.
⎯ User branch
The program processing is performed in 128-byte units. It consists the program pulse application, verify read, and
several other steps. Erasing is performed in one divided-block units and consists of several steps. The user processing
routine can be executed between the steps, this setting for which is called the user branch addition.
• Emulation function of flash memory by using the on-chip RAM
As flash memory is overlapped with part of the on-chip RAM, the flash memory programming can be emulated in real
time.
• Protection modes
There are two protection modes. Software protection by the register setting and hardware protection by the FWE pin.
The protection state for flash memory programming/erasing can be set.
When abnormalities, such as runaway of programming/erasing are detected, these modes enter the error protection
state and the programming/erasing processing is suspended.
• Programming/erasing time
The flash memory programming time is t_P ms (typ) in 128-byte simultaneous programming and t_P/128 ms per byte.
The erasing time is t_E s (typ) per block.
• Number of programming
The number of flash memory programming can be up to N_WEC times.
• Operating frequency at programming/erasing
The operating frequency at programming/erasing is a maximum of 80 MHz.
Rev.3.00 Mar. 12, 2008 Page 727 of 948
REJ09B0177-0300