UPD78F1502AGK-GAK-AX Datasheet, PDF (949/1031 Pages) Renesas Technology Corp – 16-Bit Single-Chip Microcontrollers

78K0R/Lx3
CHAPTER 31 ELECTRICAL SPECIFICATIONS
Flash Memory Programming Characteristics
(TA = −40 to +85°C, 1.8 V ≤ VDD = EVDD ≤ 5.5 V, VSS = EVSS = 0 V)
Parameter
Symbol
Conditions
MIN.
VDD supply current
IDD
Typ. = 10 MHz, Max. = 20 MHz
Number of rewrites per chip
Cerwr
1 erase +
1 write
after
erase =
1 rewrite
Note
When a flash
memory
programmer is
used, and the
libraries provided
by Renesas
Electronics are
used
Retention: 1000
15 years
When the
EEPROM
emulation libraries
provided by
Renesas
Electronics are
used
Retention
:5 years
10000
TYP.
6
MAX.
20
Unit
mA
Times
Times
Note When a product is first written after shipment, “erase → write” and “write only” are both taken as one rewrite.
R01UH0004EJ0501 Rev.5.01
933
Jun 20, 2011