MC9S12XD256MAL Datasheet, PDF (1259/1348 Pages) Freescale Semiconductor, Inc – Freescale’s Scalable Controller Area Network

Appendix A Electrical Characteristics
Table A-17. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1 D External oscillator clock
f_NVMOSC
0.5
—
80¹
MHz
2 D Bus frequency for programming or erase operations
f_NVMBUS
1
—
—
MHz
3 D Operating frequency
f_NVMOP
150
—
200
kHz
4 P Single word programming time
t_swpgm
46²
—
74.5³
µs
5 D Flash burst programming consecutive word ⁴
t_bwpgm
20.4²
—
31³
µs
6 D Flash burst programming time for 64 words⁴
t_brpgm
1331.2²
—
2027.5³
µs
7 P Sector erase time
t_era
20⁵
—
26.7³
ms
8 P Mass erase time
t_mass
100⁵
—
133³
ms
9 D Blank check time Flash per block
t_check
11⁶
—
65546⁷
t_cyc
10 D Blank check time EEPROM per block
t_check
11⁶
—
2058⁷
t_cyc
1 _{Restrictions for oscillator in crystal mode apply.}
2 _{Minimum programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency}
f_bus.
3 _{Maximum erase and programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. Refer}
to formulae in Sections Section A.3.1.1, “Single Word Programming” – Section A.3.1.4, “Mass Erase” for guidance.
4 _{Burst programming operations are not applicable to EEPROM}
5 _{Minimum erase times are achieved under maximum NVM operating frequency, fNVMOP.}
6 _{Minimum time, if first word in the array is not blank}
7 _{Maximum time to complete check on an erased block}
Freescale Semiconductor
MC9S12XDP512 Data Sheet, Rev. 2.21
1261