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HD64F2638F20J Datasheet, PDF (946/1512 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series
Section 21C ROM
(H8S/2635 Group)
H8S/2639, H8S/2638, H8S/2636,
H8S/2630, H8S/2635 Group
21C.14.1 Notes on Power-Down States
1. When the flash memory is in a power-down state, part or all of the internal power supply
circuitry is halted. Therefore, a power supply circuit stabilization period must be provided
when returning to normal operation. When the flash memory returns to its normal operating
state from a power-down state, bits STS2 to STS0 in SBYCR must be set to provide a wait
time of at least 20 µs (power supply stabilization time), even if an oscillation stabilization
period is not necessary.
2. In a power-down state, FLMCR1, FLMCR2, EBR1, EBR2, RAMER, and FLPWCR cannot be
read from or written to.
21C.15 Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode, the RAM emulation function, and
programmer mode are summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
the Renesas microcomputer device type* with 256-kbyte on-chip flash memory.
Only use the specified socket adapter. Failure to observe these points may result in damage to the
device.
Note: * The H8S/2635 is Renesas Electronics microcomputer devices with 256 kbytes of on-chip
flash memory. (The H8S/2635 has 192 kbytes of PROM. The area from H'30000 to
H'3FFFF should be programmed as H'FF.)
Powering on and off (see figures 21C-18 to 21C-20): Do not apply a high level to the FWE pin
until VCC has stabilized. Also, drive the FWE pin low before turning off VCC.
When applying or disconnecting VCC power, fix the FWE pin low and place the flash memory in
the hardware protection state.
The power-on and power-off timing requirements should also be satisfied in the event of a power
failure and subsequent recovery.
Page 896 of 1458
REJ09B0103-0800 Rev. 8.00
May 28, 2010