HD64F2638F20J Datasheet, PDF (1078/1512 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series

Section 24 Electrical Characteristics
H8S/2639, H8S/2638, H8S/2636,
H8S/2630, H8S/2635 Group
24.3.7 Flash Memory Characteristics
Table 24-34 shows the flash memory characteristics.
Table 24-34 Flash Memory Characteristics
Conditions: V_CC =4.5 V to 5.5 V, PWMV_CC = 4.5 V to 5.5 V, AV_CC = 4.5 V to 5.5 V,
V_ref = 4.5 V to AV_CC, V_SS = PWMV_SS = PLLV_SS, AV_SS = 0 V
T_a = 0 to +75°C (Programming/erasing operating temperature range: regular
specification)
Item
Programming time^{*1 *2 *4}
Symbol
tP
Erase time^{*1 *3 *5}
Reprogramming count
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
tE
NWEC
tsswe
tspsu
tsp30
tsp200
tsp10
Erase
Wait time after P bit clear^*1
tcp
Wait time after PSU bit clear^*1 tcpsu
Wait time after PV bit setting^*1 tspv
Wait time after H'FF dummy
tspvr
write^*1
Wait time after PV bit clear^*1
tcpv
Wait time after SWE bit clear^*1 tcswe
Maximum programming count^{*1 *4} N
Wait time after SWE bit setting^*1 tsswe
Wait time after ESU bit setting^*1 tsesu
Wait time after E bit setting^{*1 *5} tse
Wait time after E bit clear^*1
tce
Wait time after ESU bit clear^*1 tcesu
Wait time after EV bit setting^*1 tsev
Min.
—
—
—
1
50
28
198
8
5
5
4
2
2
100
—
1
100
10
10
10
20
Typ.
10
100
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
Max. Unit
Test Condition
200 ms/
128 bytes
1200 ms/block
100 Times
— µs
— µs
32 µs
Programming
time wait
202 µs
Programming
time wait
12 µs
Additional-
programming
time wait
— µs
— µs
— µs
— µs
—
—
1000
—
—
100
—
—
—
µs
µs
Times
µs
µs
ms
µs
µs
µs
Erase time wait
Page 1028 of 1458
REJ09B0103-0800 Rev. 8.00
May 28, 2010