M16C65 Datasheet, PDF (729/829 Pages) Renesas Technology Corp – RENESAS MCU M16C FAMILY / M16C/60

Under development
M16C/65 Group
Preliminary Specification
This is a preliminary specification and is subject to change.
30. Flash Memory
30. Flash Memory
Note
P1, P4_4 to P4_7, P7_2 to P7_5, P9_1 of the 80-pin package have no external connections.
There are no P11 to P14 in the 80-pin and 100-pin packages. For the 80-pin and 100-pin
packages, do not use these pins for the entry of user boot function.
30.1 Introduction
Flash memory is used as ROM in this product. The flash memory in this chapter indicates the flash
memory inside a microcomputer.
In this product, the flash memory can perform in three rewrite modes: CPU rewrite mode, standard serial
I/O mode, and parallel I/O mode.
Table 30.1 lists Flash Memory Specifications (see to Table 1.1 to Table 1.6 “Specifications” for the items
not listed in Table 30.1.
Table 30.1 Flash Memory Specifications
Item
Specification
Flash memory rewrite mode
3 modes (CPU rewrite, standard serial I/O, and parallel I/O)
Erase block
Program ROM 1
See Figure 30.1 “Flash Memory Block Diagram”.
Program ROM 2
1 block (16 Kbytes)
Data flash
2 blocks (4 Kbytes each)
Program method
In units of 2 words
Erase method
Block erase
Program and erase control method
Program and erase controlled by software command
Suspend function (under review)
Program suspend and erase suspend
Protect method
A lock bit protects each block
Number of commands
8 commands
Program and erase Program ROM 1 and _{1,000 times} ⁽¹⁾
cycles
program ROM 2
Data flash
10,000 times ⁽¹⁾
Data retention
20 years
Flash memory rewrite disable function
Parallel I/O mode
ROM code protect function
Standard serial I/O mode
ID code check function, forced erase function, and standard serial I/O
mode disable function
User boot function
User boot mode
Note:
1. Definition of program and erase cycles
The program and erase cycles is the number of erase operations performed on a per-block
basis. For example, assume a case where a 4-Kbyte block is programmed in 1,024 operations,
writing two words at a time, and erased thereafter. In this case, the block is reckoned as having
been programmed and erased once.
If the program and erase cycles are 1,000 times, each block can be erased up to 1,000 times.
REJ09B0484-0030 Rev.0.30 Sep 09, 2008
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