HD64F2149 Datasheet, PDF (732/1035 Pages) Renesas Technology Corp – Hitachi 16-Bit Single-Chip Microcomputer

V_CC
RES
t_osc1
t_bmv
Memory read Auto-program mode
mode
Auto-erase mode
Command wait
state
t_dwn
Command
wait state
Normal/
abnormal end
identification
Don't care
Command acceptance
Figure 22.23 Oscillation Stabilization Time, Programmer Mode Setup Time, and Power
Supply Fall Sequence
22.10.10 Notes On Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
• When performing programming using programmer mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. Auto-programming should be performed once only on the same address block.
22.11 Flash Memory Programming and Erasing Precautions
Precautions concerning the use of on-board programming mode and programmer mode are
summarized below.
Use the specified voltages and timing for programming and erasing: Applied voltages in
excess of the rating can permanently damage the device. Use a PROM programmer that supports
3.3 V programming voltage for Hitachi microcomputer device types with 64-kbyte on-chip flash
memory.
Do not select the HN28F101 setting for the PROM programmer or 5.0 V setting for the
programming voltage, and only use the specified socket adapter. Incorrect use will result in
damaging the device.
Powering on and off: When applying or disconnecting V_CC, fix the RES pin low and place the
flash memory in the hardware protection state.
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