HD64F2149 Datasheet, PDF (724/1035 Pages) Renesas Technology Corp – Hitachi 16-Bit Single-Chip Microcomputer

22.10.4 Memory Read Mode
• After the end of an auto-program, auto-erase, or status read operation, the command wait state
is entered. To read memory contents, a transition must be made to memory read mode by
means of a command write before the read is executed.
• Command writes can be performed in memory read mode, just as in the command wait state.
• Once memory read mode has been entered, consecutive reads can be performed.
• After power-on, memory read mode is entered.
Table 22.14 AC Characteristics in Memory Read Mode
Conditions: V_CC = 3.3 V ±0.3 V, V_SS = 0 V, T_a = 25°C ±5°C
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Symbol
t _nxtc
t _ceh
t _ces
t _dh
t _ds
t _wep
t_r
t_f
Min
20
0
0
50
50
70
—
—
Max
—
—
—
—
—
—
30
30
Unit
µs
ns
ns
ns
ns
ns
ns
ns
FA17 to FA0
Command write
Memory read mode
Address stable
CE
OE
WE
FO7 to FO0
t_wep t_ceh
t_nxtc
t_ces
t_f
t_r
Data
t_dh
t_ds
Note: Data is latched on the rising edge of WE.
Data
Figure 22.16 Memory Read Mode Timing Waveforms after Command Write
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