SH7211 Datasheet, PDF (948/1228 Pages) Renesas Technology Corp – 32-Bit RISC Microcomputer SuperHTM RISC engine Family

Section 21 Flash Memory
21.5.2 User Program Mode
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcontroller.
The overview flow is shown in figure 21.9.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, transition to reset must not be executed. Doing so may cause damage or destroy flash
memory. If reset is executed accidentally, the reset signal must be released after the reset input
period, which is longer than the normal 100 μs.
For details on the programming procedure, see the description in section 21.5.2 (2), Programming
Procedure in User Program Mode. For details on the erasing procedure, see the description in
section 21.5.2 (3), Erasing Procedure in User Program Mode.
For the overview of a processing that repeats erasing and programming by downloading the
programming program and the erasing program in separate on-chip ROM areas using FTDAR, see
the description in section 21.5.2 (4), Erasing and Programming Procedure in User Program Mode.
Programming/erasing
start
When programming,
program data is prepared
FWE=1 ?
No
Yes
1. Inputting high level to the FWE pin sets the
FWE bit to 1.
2. Programming/erasing is executed only in
the on-chip RAM. However, if the program data
is in a consecutive area and can be accessed
by the MOV.B instruction of the CPU like
SRAM/ROM, the program data can be in an
external space.
3. After programming/erasing is finished, low level
must be input to the FWE pin for protection.
Programming/erasing
procedure program is
transferred to the on-chip
RAM and executed
Programming/erasing
end
Figure 21.9 Programming/Erasing Overview Flow
Rev. 2.00 May. 08, 2008 Page 924 of 1200
REJ09B0344-0200