SH7211 Datasheet, PDF (1189/1228 Pages) Renesas Technology Corp – 32-Bit RISC Microcomputer SuperHTM RISC engine Family

Item
21.1 Features
Page
886
21.2.2 Operating Mode 888
Figure 21.2 Mode
Transition of Flash
Memory
Table 21.1 Relationship 889
between FWE and MD
Pins and Operating
Modes
21.4.1 Registers
897
Table 21.5 Register/
Parameter and Target
Mode
Revision (See Manual for Details)
Description amended
• Programming/erasing time
The time taken to program 256 bytes of flash memory in a
single round is 2 ms (typ.), which is equivalent to 7.8 μs
per byte. The erasing time is 80 ms (typ.) per 8-Kbyte
block, 600 ms (typ.) per 64-Kbyte block, and 1200 ms
(typ.) per 128-Kbyte block.
• Number of programming operations
The flash memory can be programmed up to 100 times.
Figure amended
ROM invalid
mode
RES = 0
ROM invalid
mode setting
Reset state
RES = 0
Programmer
mode setting
Programmer
mode
R_U^E_s^S_er⁼_mo⁰_de setting
Boot
RES ₌
mode _setting
0
User mode
FWE = 0
FWE = 1
User program
mode
User boot
mode
Boot mode
On-board programming mode
Note: * Except for single chip mode.
Table amended
Pin
RES
FWE
MD0
MD1
Reset
State
0
0/1
0/1
0/1
ROM
Invalid
Mode
1
0
0/1*¹
0
User
Mode
1
0
0/1*²
1
Table amended
User
User
Program Boot
Mode Mode
1
1
1
1
0
1
1
0
Boot
Mode
1
1
0
0
Programmer
Mode
Setting value
depends on the
condition of the
specialized
PROM
programmer.
Programming/
erasing interface
registers
FCCS
FPCS
FECS
FKEY
FMATS
FTDAR
Download
√
√
√
√
—
√
Initiali-
zation
—
—
—
—
—
—
Program-
ming
Erasure
—
—
—
—
—
—
√
√
√*¹
√*¹
—
—
Read
—
—
—
—
√*²
—
RAM
Emulation
—
—
—
—
—
—
Rev. 2.00 May. 08, 2008 Page 1165 of 1200
REJ09B0344-0200