HD64F2145 Datasheet, PDF (773/829 Pages) Renesas Technology Corp – Hitachi 16-Bit Single-Chip Microcomputer

28.2.6 Flash Memory Characteristics
Table 28.30 shows the flash memory characteristics.
Table 28.30 Flash Memory Characteristics (Operation Range at Programming/Erasing)
5-V version conditions:
V_CC = 4.0 V to 5.5 V, V_SS = 0 V, T_a = –20 to +75°C (normal
specification product), T_a = –40 to +85°C (wide range temperature
specification product),
3-V version conditions:
V_CC = 3.0 V to 3.6 V, V_SS = 0 V, T_a = –20 to +75°C
Item
Test
Symbol Min
Typ
Max Unit Condition
Programming time*¹,*²,*⁴
t_P
—
10
200
ms/
128 bytes
Erase time*¹,*³,*⁶
t
—
100
1200 ms/
E
block
Reprogramming count
N
—
—
100
times
WEC
Programming Wait time after x
SWE-bit setting*¹
1
—
—
µs
Wait time after y
PSU-bit setting*¹
50
—
—
µs
Wait time after z1
P-bit setting*¹, *⁴ _z2
28
30
32
µs
198
200
202
µs
1≤n≤6
7 ≤ n ≤ 1000
z3
8
10
12
µs
Additional
write
Wait time after α
5
—
—
µs
P-bit clear*¹
Wait time after β
PSU-bit clear*¹
5
—
—
µs
Wait time after γ
PV-bit setting*¹
4
—
—
µs
Wait time after ε
dummy write*¹
2
—
—
µs
Wait time after η
PV-bit clear*¹
2
—
—
µs
Wait time after θ
SWE-bit clear*¹
100
—
—
µs
Maximum
N
programming
count*¹, *⁴,*⁵
—
—
1000 times
Rev. 2.0, 08/02, page 733 of 788