HD64F2145 Datasheet, PDF (645/829 Pages) Renesas Technology Corp – Hitachi 16-Bit Single-Chip Microcomputer

In the recommended algorithm, flash memory programming/erasing can be performed without
subjecting this LSI to voltage stress or sacrificing program data reliability. When setting the P
or E bit in FLMCR1 to 1, set the watchdog timer against program runaway.
4. Do not set/clear the SWE bit during program execution in the flash memory.
Do not set/clear the SWE bit during program execution in the flash memory. An interval of at
least 100 µs is necessary between program execution or data reading in flash memory and
SWE bit clearing. When the SWE bit is set to 1, flash memory data can be modified, however,
flash memory data can be read only in program-verify or erase-verify mode. Do not access the
flash memory for a purpose other than verification during programming/erasing. Do not clear
the SWE bit during programming, erasing, or verifying.
5. Do not use interrupts during flash memory programming/erasing
In order to give the highest priority to programming/erasing operation, disable all interrupts
including NMI input when the flash memory is programmed or erased.
6. Do not perform additional programming. Programming must be performed in the erased state.
Program the area with 128-byte programming-unit blocks in on-board programming or
programmer mode only once. Perform programming in the state where the programming-unit
block is fully erased.
7. Ensure that the PROM programmer is correctly attached before programming.
If the socket, socket adapter, or product index does not match the specifications, too much
current flows and the product may be damaged.
8. Do not touch the socket adapter or LSI while programming.
Touching either of these can cause contact faults and write errors.
Rev. 2.0, 08/02, page 605 of 788