HD64F2145 Datasheet, PDF (617/829 Pages) Renesas Technology Corp – Hitachi 16-Bit Single-Chip Microcomputer

Section 23 ROM
This LSI has an on-chip ROM (flash memory or masked ROM). The features of the flash memory
are summarized below.
A block diagram of the flash memory is shown in figure 23.1.
23.1 Features
• Size
Product Classification
H8S/2161B
H8S/2160B
H8S/2141B
H8S/2140B
H8S/2145B
H8S/2148B
RAM Capacitance
128 kbytes
64 kbytes
128 kbytes
64 kbytes
256 kbytes
128 kbytes
RAM Address
H’000000–H’01FFFF (mode 2)
H’0000–H’DFFF (mode 3)
H’000000–H’00FFFF (mode 2)
H’0000–H’DFFF (mode 3)
H’000000–H’01FFFF (mode 2)
H’0000–H’DFFF (mode 3)
H’000000–H’00FFFF (mode 2)
H’0000–H’DFFF (mode 3)
H’000000–H’03FFFF (mode 2)
H’0000–H’DFFF (mode 3)
H’000000–H’01FFFF (mode 2)
H’0000–H’DFFF (mode 3)
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erase is performed in single-block units.
The flash memory is configured as follows:
 64-kbyte version: 8 kbytes × 2 blocks, 16 kbytes × 1 block, 28 kbytes × 1 block, and 1
kbyte × 4 blocks
 128-kbyte version: 32 kbytes × 2 blocks, 8 kbytes × 2 blocks, 16 kbytes × 1 block, 28
kbytes × 1 block, and 1 kbyte × 4 blocks
 256-kbyte version: 64 kbytes × 3 blocks, 32 kbytes × 1 block, and 4 kbytes × 8 blocks.
To erase the entire flash memory, each block must be erased in turn.
• Programming/erase time
It takes 10 ms (typ.) to program the flash memory 128 bytes at a time; 80 µs (typ.) per 1 byte.
Erasing one block takes 100 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• Two flash memory on-board programming modes
ROMF254A_010020020700
Rev. 2.0, 08/02, page 577 of 788