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| HD64F2168 Datasheet, PDF (853/874 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer | |||
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25.6 Flash Memory Characteristics
Table 25.16 lists the flash memory characteristics.
Table 25.16 Flash Memory Characteristics
Condition: VCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, Avref = 3.0 V to AVCC, VSS = AVSS
=0V
Ta = 0°C to +75°C (operating temperature range for programming/erasing in regular
specifications)
Ta = 0°C to +85°C (operating temperature range for programming/erasing in wide-
range specifications)
⢠H8S/2168
Item
Symbol Min. Typ. Max. Unit
Test
Conditions
Programming time*1*2*4
t
P
Erase time*1*2*4
tE

3
30
ms/128 bytes

80
800 ms/4-kbyte block

500 5000 ms/32-kbyte block

1000 10000 ms/64-kbyte block
Programming time
Σ tP
(total)*1*2*4

5
15
s/256 kbytes
Ta = 25°C
Erase time (total)*1*2*4
Σ
t
E

5
15
s/256 kbytes
Programming and
Σ
t
PE

10
30
s/256 kbytes
Erase time (total)*1*2*4
Ta = 25°C
Ta = 25°C
Reprogramming
count*5
NWEC
100*3 1000 
Times
Data retention time*4 tDRP
10


Years
Notes: 1. Programming and erase time depends on the data.
2. Programming and erase time do not include data transfer time.
3. This value indicates the minimum number of which the flash memory are
reprogrammed with all characteristics guaranteed. (The guaranteed value ranges from
1 to the minimum number.)
4. This value indicates the characteristics while the flash memory is reprogrammed within
the specified range (including the minimum number).
5. Reprogramming count in each erase block.
Rev. 3.00, 03/04, page 813 of 830
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