D12320VF25IV Datasheet, PDF (939/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 19 ROM
Do not apply a constant high level to the FWE pin: Apply a high level to the FWE pin only
when programming or erasing flash memory. A system configuration in which a high level is
constantly applied to the FWE pin should be avoided. Also, while a high level is applied to the
FWE pin, the watchdog timer should be activated to prevent overprogramming or overerasing due
to program runaway, etc.
Use the recommended algorithm when programming and erasing flash memory: The
recommended algorithm enables programming and erasing to be carried out without subjecting the
device to voltage stress or sacrificing program data reliability. When setting the P1 or E1 bit in
FLMCR1 or the P2 or E2 bit in FLMCR2, the watchdog timer should be set beforehand as a
precaution against program runaway, etc.
Notes on setting/clearing of bits SWE1 and SWE2: Do not set or clear the SWE1 bit or SWE2
bit during execution of a program in flash memory. Wait for at least 100 µs after clearing the
SWE1 bit or SWE2 bit before executing a program or reading data in flash memory.
When the SWE1 bit or SWE2 bit is set, data in flash memory can be rewritten, but flash memory
addresses H'000000 to H'03FFFF can only be read in program-verify or erase-verify mode when
SWE1 = 1, and flash memory addresses H'040000 to H'07FFFF can only be read in program-
verify or erase-verify mode when SWE2 = 1. Access the relevant address area in flash memory
only for verify operations (verification during programming/erasing).
Also, do not clear the SWE1 bit or SWE2 bit during programming, erasing, or verifying.
Similarly, when using the RAM emulation function while a high level is being input to the FWE
pin, the SWE1 bit must be cleared before executing a program or reading data in flash memory.
However, the RAM area overlapping flash memory space can be read and written to regardless of
whether the SWE1 bit is set or cleared.
Do not use interrupts while flash memory is being programmed or erased: All interrupt
requests, including NMI, should be disabled during FWE application to give priority to
program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming: In on-
board programming, perform only one programming operation on a 128-byte programming unit
block. In PROM mode, too, perform only one programming operation on a 128-byte programming
unit block. Programming should be carried out with the entire programming unit block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer:
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Rev.6.00 Sep. 27, 2007 Page 907 of 1268
REJ09B0220-0600