D12320VF25IV Datasheet, PDF (937/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Table 19.66 Command Wait State Transition Time Specifications
Item
Symbol
Min
Standby release (oscillation
tosc1
30
stabilization time)
PROM mode setup time
tbmv
10
VCC hold time
tdwn
0
Max
—
—
—
Section 19 ROM
Unit
ms
ms
ms
VCC
RES
FWE
tosc1
tbmv
Memory read
mode
Command
wait state
Auto-program mode
Auto-erase mode
Command
wait state
Normal/
abnormal end
identification tdwn
Note: Except in auto-program mode and auto-erase mode, drive the FWE input pin low.
Figure 19.85 Oscillation Stabilization Time, PROM Mode Setup Time, and Power Supply
Fall Sequence
19.29.10 Notes on Memory Programming
• When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
• When performing programming using PROM mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Renesas
Technology. For other chips for which the erasure history is unknown, it is
recommended that auto-erasing be executed to check and supplement the initialization
(erase) level.
2. Auto-programming should be performed once only on the same address block.
Additional programming cannot be carried out on address blocks that have already
been programmed.
Rev.6.00 Sep. 27, 2007 Page 905 of 1268
REJ09B0220-0600