D12320VF25IV Datasheet, PDF (1009/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 22 Electrical Characteristics
22.2.6 Flash Memory Characteristics
Table 22.22 Flash Memory Characteristics
Conditions: V_CC = 3.0 V to 3.6 V, AV_CC = 3.0 V to 3.6 V, V_ref = 3.0 V to AV_CC, V_SS = AV_SS =
0 V, T_a = 0°C to +75°C (program/erase operating temperature range: regular
specifications), T_a = 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item
Programming time^{*1 *2 *4}
Erase time^{*1 *3 *6}
Rewrite times
Data hold time
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
Symbol Min Typ Max Unit
Test
Conditions
tP
— 10
200 ms/
128 bytes
tE
NWEC
tDRP^*9
x
— 50
1000
100^*7 10000^*8 —
10 —
—
1
—
—
ms/block
Times
year
μs
y
50 —
— μs
z (z1) — —
30 μs
1≤n≤6
(z2) — —
200 μs
7 ≤ n ≤ 1000
Erasing
(z3) — —
Wait time after P bit clearing^*1
α
Wait time after PSU bit clearing^*1 β
Wait time after PV bit setting^*1
γ
Wait time after H'FF dummy write^*1 ε
Wait time after PV bit clearing^*1 η
Wait time after SWE bit clearing^*1 θ
Maximum number of writes^{*1 *4} N
Wait time after SWE bit setting^*1 x
Wait time after ESU bit setting^*1 y
Wait time after E bit setting^{*1 *6}
z
Wait time after E bit clearing^*1
α
Wait time after ESU bit clearing^*1 β
Wait time after EV bit setting^*1
γ
Wait time after H'FF dummy write^*1 ε
Wait time after EV bit clearing^*1 η
Wait time after SWE bit clearing^*1 θ
Maximum number of erases^{*1 *6} N
5
—
5
—
4
—
2
—
2
—
100 —
——
1
—
100 —
——
10 —
10 —
20 —
2
—
4
—
100 —
——
10 μs
— μs
— μs
— μs
— μs
— μs
— μs
1000^*5 Times
— μs
— μs
10 ms
— μs
— μs
— μs
— μs
— μs
— μs
100 Times
Wait time for
additional
writing
Wait time for
erase time
Rev.6.00 Sep. 27, 2007 Page 977 of 1268
REJ09B0220-0600