D12320VF25IV Datasheet, PDF (1227/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Appendix B Internal I/O Registers
FLMCR1—Flash Memory Control Register 1
(H8S/2326 F-ZTAT)
H'FFC8
Flash Memory
Bit
:7
6
5
4
3
2
1
0
FWE SWE1 ESU1 PSU1 EV1 PV1
E1
P1
Initial value : —^*1
0
0
0
0
0
0
0
R/W
:R
R/W R/W R/W R/W R/W R/W R/W
Program 1^*2
0 Program mode cleared
1 Transition to program mode
[Setting condition]
When FWE = 1, SWE1 = 1,
and PSU1 = 1
Erase 1^*2
0 Erase mode cleared
1 Transition to erase mode
[Setting condition]
When FWE = 1, SWE1 = 1,
and ESU1 = 1
Program-Verify 1^*2
0 Program-verify mode cleared
1 Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE1 = 1
Erase-Verify 1^*2
0 Erase-verify mode cleared
1 Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE1 = 1
Program Setup 1^*2
0 Program setup cleared
1 Program setup
[Setting condition]
When FWE = 1 and SWE1 = 1
Erase Setup 1^*2
0 Erase setup cleared
1 Erase setup
[Setting condition]
When FWE = 1 and SWE1 = 1
Software Write Enable 1^*2
0 Writes disabled
1 Writes enabled
[Setting condition]
When FWE = 1
Flash Write Enable
0 When a low level is input to the FWE pin (hardware-protected state)
1 When a high level is input to the FWE pin
Notes: 1. Determined by the state of the FWE pin.
2. Applicable addresses are H'000000 to H'03FFFF.
Rev.6.00 Sep. 27, 2007 Page 1195 of 1268
REJ09B0220-0600