D12320VF25IV Datasheet, PDF (1226/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Appendix B Internal I/O Registers
FLMCR1—Flash Memory Control Register 1 H'FFC8
(H8S/2329B F-ZTAT, H8S/2328B F-ZTAT)
Bit
:
7
6
5
4
3
2
FWE SWE ESU PSU
EV
PV
Initial value : —*
0
0
0
0
0
Read/Write :
R
R/W R/W R/W R/W R/W
Flash Memory
1
0
E
P
0
0
R/W R/W
Program
0 Program mode cleared
1 Transition to program mode
[Setting condition]
When FWE = 1, SWE = 1, and PSU = 1
Erase
0 Erase mode cleared
1 Transition to erase mode
[Setting condition]
When FWE = 1, SWE = 1, and ESU = 1
Program-Verify
0 Program-verify mode cleared
1 Transition to program-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Erase-Verify
0 Erase-verify mode cleared
1 Transition to erase-verify mode
[Setting condition]
When FWE = 1 and SWE = 1
Program Setup
0 Program setup cleared
1 Program setup
[Setting condition]
When FWE = 1 and SWE = 1
Software Write Enable
0 Writes disabled
1 Writes enabled
[Setting condition]
When FWE = 1
Erase Setup
0 Erase setup cleared
1 Erase setup
[Setting condition]
When FWE = 1 and SWE = 1
Flash Write Enable
0 When a low level is input to the FWE pin (hardware-protected state)
1 When a high level is input to the FWE pin
Note: * Determined by the state of the FWE pin (H8S/2328B F-ZTAT).
The FWE bit is fixed high in the H8S/2329B F-ZTAT.
Rev.6.00 Sep. 27, 2007 Page 1194 of 1268
REJ09B0220-0600