D12320VF25IV Datasheet, PDF (925/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 19 ROM
19.29.3 PROM Mode Operation
Table 19.56 shows how the different operating modes are set when using PROM mode, and table
19.57 lists the commands used in PROM mode. Details of each mode are given below.
Memory Read Mode: Memory read mode supports byte reads.
Auto-Program Mode: Auto-program mode supports programming of 128 bytes at a time. Status
polling is used to confirm the end of auto-programming.
Auto-Erase Mode: Auto-erase mode supports automatic erasing of the entire flash memory.
Status polling is used to confirm the end of auto-erasing.
Status Read Mode: Status polling is used for auto-programming and auto-erasing, and normal
termination can be confirmed by reading the I/O₆ signal. In status read mode, error information is
output if an error occurs.
Table 19.56 Settings for Each Operating Mode in PROM Mode
Pin Names
Mode
FWE
CE
OE
WE
I/O7 to I/O0 A18 to A0
Read
H or L
L
L
H
Data output Ain
Output disable H or L
L
H
H
Hi-Z
X
Command write H or L^*3 L
H
L
Data input Ain^*2
Chip disable^*1
H or L
H
X
X
Hi-Z
X
Legend:
H: High level
L: Low level
Hi-Z: High impedance
X: Don’t care
Notes: 1. Chip disable is not a standby state; internally, it is an operation state.
2. Ain indicates that there is also address input in auto-program mode.
3. For command writes when making a transition to auto-program or auto-erase mode,
input a high level to the FWE pin.
Rev.6.00 Sep. 27, 2007 Page 893 of 1268
REJ09B0220-0600