D12320VF25IV Datasheet, PDF (899/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Table 19.49 Flash Memory Erase Blocks
Block (Size)
EB0 (4 kbytes)
EB1 (4 kbytes)
EB2 (4 kbytes)
EB3 (4 kbytes)
EB4 (4 kbytes)
EB5 (4 kbytes)
EB6 (4 kbytes)
EB7 (4 kbytes)
EB8 (32 kbytes)
EB9 (64 kbytes)
EB10 (64 kbytes)
EB11 (64 kbytes)
EB12 (64 kbytes)
EB13 (64 kbytes)
EB14 (64 kbytes)
EB15 (64 kbytes)
Address
H'000000 to H'000FFF
H'001000 to H'001FFF
H'002000 to H'002FFF
H'003000 to H'003FFF
H'004000 to H'004FFF
H'005000 to H'005FFF
H'006000 to H'006FFF
H'007000 to H'007FFF
H'008000 to H'00FFFF
H'010000 to H'01FFFF
H'020000 to H'02FFFF
H'030000 to H'03FFFF
H'040000 to H'04FFFF
H'050000 to H'05FFFF
H'060000 to H'06FFFF
H'070000 to H'07FFFF
Section 19 ROM
19.23.5 System Control Register 2 (SYSCR2)
Bit
:
7
6
5
4
3
2
1
0
—
—
—
— FLSHE —
—
—
Initial value :
0
0
0
0
0
0
0
0
R/W
:—
—
—
—
R/W
—
—
—
SYSCR2 is an 8-bit readable/writable register that performs on-chip flash memory control.
SYSCR2 is initialized to H'00 by a reset and in hardware standby mode.
SYSCR2 can only be used in the F-ZTAT versions. In the mask ROM versions this register will
return an undefined value if read, and cannot be modified.
Bits 7 to 4—Reserved: These bits cannot be modified and are always read as 0.
Rev.6.00 Sep. 27, 2007 Page 867 of 1268
REJ09B0220-0600