D12320VF25IV Datasheet, PDF (1010/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 22 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes. (In the H8S/2329B and H8S/2328B, indicates the
total time during which the P bit is set in flash memory control register 1 (FLMCR1). In
the H8S/2326, indicates the total time during which the P1 bit and P2 bit in flash
memory control registers 1 and 2 (FLMCR1, FLMCR2) are set. Does not include the
program-verify time.)
3. Time to erase one block. (In the H8S/2329B and H8S/2328B, indicates the time during
which the E bit is set in FLMCR1. In the H8S/2326, indicates the total time during which
the E1 bit in FLMCR1 and the E2 bit in FLMCR are set. Does not include the erase-
verify time.)
4. Maximum programming time
N
t_P(max)
=
Σ
i=1
wait
time
after
P
bit
setting
(z)
5. The maximum number of writes (N) should be set as shown below according to the
actual set value of z so as not to exceed the maximum programming time (tP(max)).
The wait time after P bit setting (z) should be changed as follows according to the
number of writes (n).
Number of writes (n)
1≤n≤6
z = 30 μs
7 ≤ n ≤ 1000 z = 200 μs
1≤n≤6
z = 10 μs: For additional writing
6. For the maximum erase time (tE(max)), the following relationship applies between the
wait time after E bit setting (z) and the maximum number of erases (N):
tE(max) = Wait time after E bit setting (z) × maximum number of erases (N)
7. The minimum number of rewrites after which all characteristics are guaranteed. (The
guaranteed range is one to min. rewrites.)
8. Reference value at 25°C. (This is a general indication of the number of rewrites
possible under normal conditions.)
9. The data retention characteristics within the specified range, including min. rewrites.
22.3 Usage Note
Although both the F-ZTAT and mask ROM versions fully meet the electrical specifications listed
in this manual, there may be differences in the actual values of the electrical characteristics,
operating margins, noise margins, and so forth, due to differences in the fabrication process, the
on-chip ROM, and the layout patterns.
If the F-ZTAT version is used to carry out system evaluation and testing, therefore, when
switching to the mask ROM version the same evaluation and testing procedures should also be
conducted on this version.
Rev.6.00 Sep. 27, 2007 Page 978 of 1268
REJ09B0220-0600