D12320VF25IV Datasheet, PDF (909/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Write FWE assessment program
and transfer program
(and programming/erase control
program if necessary) beforehand
MD2, MD1, MD0 = 101 or 111
Reset start
Transfer programming/erase
control program to RAM
Branch to programming/erase
control program in RAM area
FWE = high*
Section 19 ROM
Execute programming/erase control
program (flash memory rewriting)
Clear FWE*
Branch to application program
in flash memory
Notes: Do not apply a constant high level to the FWE pin. A high level should be applied to
the FWE pin only when programming or erasing flash memory. Also, while a high level
is applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 19.30,
Flash Memory Programming and Erasing Precautions.
Figure 19.70 Example of User Program Mode Execution Procedure
Rev.6.00 Sep. 27, 2007 Page 877 of 1268
REJ09B0220-0600