D12320VF25IV Datasheet, PDF (817/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 19 ROM
19.11.6 Auto-Erase Mode
• Auto-erase mode supports only total memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O₆. Alternatively, status read mode can also
be used for this purpose (the I/O₇ status polling pin is used to identify the end of an auto-erase
operation).
• Status polling I/O₆ and I/O₇ pin information is retained until the next command write. As long
as the next command write has not been performed, reading is possible by enabling CE and
OE.
AC Characteristics
Table 19.20 AC Characteristics in Auto-Erase Mode
Conditions: V_CC = 3.3 V ±0.3 V, V_SS = 0 V, T_a = 25°C ±5°C
Item
Symbol
Min
Command write cycle
tnxtc
20
CE hold time
tceh
0
CE setup time
tces
0
Data hold time
tdh
50
Data setup time
tds
50
Write pulse width
twep
70
Status polling start time
tests
1
Status polling access time tspa
—
Memory erase time
terase
100
WE rise time
WE fall time
tr
—
tf
—
Max
Unit
—
µs
—
ns
—
ns
—
ns
—
ns
—
ns
—
ms
150
ns
40000
ms
30
ns
30
ns
Rev.6.00 Sep. 27, 2007 Page 785 of 1268
REJ09B0220-0600