D12320VF25IV Datasheet, PDF (781/1304 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 19 ROM
19.4.9 Register Configuration
The registers used to control the on-chip flash memory when enabled are shown in table 19.6.
In order to access the FLMCR1, FLMCR2, EBR1, and EBR2 registers, the FLSHE bit must be set
to 1 in SYSCR2 (except RAMER).
Table 19.6 Flash Memory Registers
Register Name
Flash memory control register 1
Flash memory control register 2
Erase block register 1
Erase block register 2
System control register 2
Abbreviation
FLMCR1^*5
FLMCR2^*5
EBR1^*5
EBR2^*5
SYSCR2^*6
R/W
R/W^*3
R/W^*3
R/W^*3
R/W^*3
R/W
Initial Value
H'80
H'00
H'00^*4
H'00^*4
H'00
Address^*1
H'FFC8^*2
H'FFC9^*2
H'FFCA^*2
H'FFCB^*2
H'FF42
RAM emulation register
RAMER
R/W
H'00
H'FEDB
Notes: 1. Lower 16 bits of the address.
2. Flash memory. Registers selection is performed by the FLSHE bit in system control
register 2 (SYSCR2).
3. In modes in which the on-chip flash memory is disabled, a read will return H'00, and
writes are invalid.
4. If a high level is input and the SWE bit in FLMCR1 is not set, these registers are
initialized to H'00.
5. FLMCR1, FLMCR2, EBR1, and EBR2 are 8-bit registers. Only byte accesses are valid
for these registers, the access requiring 2 states.
6. The SYSCR2 register can only be used in the F-ZTAT version. In the mask ROM
version this register will return an undefined value if read, and cannot be modified.
Rev.6.00 Sep. 27, 2007 Page 749 of 1268
REJ09B0220-0600