EP4SE360F35I4 Datasheet, PDF (227/432 Pages) Altera Corporation – This section provides a complete overview of all features relating to the Stratix IV device family, which is the most architecturlly advanced

Chapter 7: External Memory Interfaces in Stratix IV Devices
7–3
Memory Interfaces Pin Support
Memory Interfaces Pin Support
A typical memory interface requires data (D, Q, or DQ), data strobe (DQS/CQ and
DQSn/CQn), address, command, and clock pins. Some memory interfaces use data
mask (DM, BWSn, or NWSn) pins to enable write masking and QVLD pins to indicate
that the read data is ready to be captured. This section describes how Stratix IV
devices support all these different pins.
1 If you have more than one clock pair, you must place them in the same DQ group. For
example, if you have two clock pairs, you must place both of them in the same ×4
DQS group.
f For more information about pin connections, refer to the Stratix IV GX and Stratix IV E
Device Family Pin Connection Guidelines.
f For more information about pin planning and pin connections between a Stratix IV
device and an external memory device, refer to the External Memory Interface
Handbook.
DDR3, DDR2, DDR SDRAM, and RLDRAM II devices use the CK and CK# signals to
capture the address and command signals. Generate these signals to mimic the
write-data strobe using Stratix IV DDR I/O registers (DDIOs) to ensure that the
timing relationships between the CK/CK# and DQS signals (t_DQSS, t_DSS, and t_DSH in
DDR3, DDR2, and DDR SDRAM devices or t_CKDK in RLDRAM II devices) are met.
QDR II+ and QDR II SRAM devices use the same clock (K/K#) to capture write data,
address, and command signals.
Memory clock pins in Stratix IV devices are generated using a DDIO register going to
differential output pins (refer to Figure 7–2), marked in the pin table with DIFFOUT,
DIFFIO_TX, or DIFFIO_RX prefixes.
February 2011 Altera Corporation
Stratix IV Device Handbook
Volume 1