SH7080 Datasheet, PDF (1533/1644 Pages) Renesas Technology Corp – 32-Bit RISC Microcomputer SuperH™ RISC engine Family

Section 28 Electrical Characteristics
28.5 Flash Memory Characteristics
Table 28.22 Flash Memory Characteristics
Conditions: V_CC = 3.0 V to 3.6 V or 4.5 V to 5.5 V, AV_CC = 4.5 V to 5.5 V, AV_ref = 4.5 V to AV_CC,
V_SS = PLLV_SS = AV_SS = 0 V, T_a = –20°C to +85°C (consumer applications),
T_a = –40°C to +85°C (industrial applications)
Item
Symbol
Min.
Typ.
Max.
Unit
Programming time*¹*²*⁴
t_P
Erase time*¹*²*⁴
t
E
—
1
10
ms/128 bytes
—
30
100
ms/4-Kbyte
block
—
250
800
ms/32-Kbyte
block
—
500
1600
ms/64-Kbyte
block
Programming time
Σt_P
—
5
14
s/512 Kbytes
(total)*¹*²*⁴
—
2.5
7
s/256 Kbytes
Erase time (total)*¹*²*⁴
Σt
E
—
5
14
—
2.5
7
s/512 Kbytes
s/256 Kbytes
Programming and erase time Σt
PE
(total)*¹*²*⁴
—
10
28
—
5
14
s/512 Kbytes
s/256 Kbytes
Reprogramming count
N_WEC
100*³
—
—
Times
Notes: 1. Programming and erase time vary depending on the data.
2. Programming and erase time do not include data transfer time.
3. The minimum number of times for which all characteristics are guaranteed after
reprogramming (guaranteed for once to the minimum number of reprogramming times).
4. These characteristics only apply when reprogramming is performed within the range of
minimum number of times.
Rev. 3.00 May 17, 2007 Page 1475 of 1582
REJ09B0181-0300