English
Language : 

SH7058 Datasheet, PDF (909/1130 Pages) Renesas Technology Corp – Renesas SuperHTM RISC engine
23.5.2 User Program Mode
The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be
programmed/erased.)
Programming/erasing is executed by downloading the program in the microcomputer.
The overview flow is shown in figure 23.9.
High voltage is applied to internal flash memory during the programming/erasing processing.
Therefore, transition to reset or hardware standby mode must not be executed. Doing so may cause
damage or destroy flash memory. If reset is executed accidentally, the reset signal must be
released after the reset input period, which is longer than the normal 100 µs.
For details on the programming procedure, see the description in 23.5.2 (2) Programming
Procedure in User Program Mode. For details on the erasing procedure, see the description in
23.5.2 (3) Erasing Procedure in User Program Mode.
For the overview of a processing that repeats erasing and programming by downloading the
programming program and the erasing program in separate on-chip ROM areas using FTDAR, see
the description in 23.5.2 (4) Erasing and Programming Procedure in User Program Mode.
Programming/erasing
start
When programming,
program data is prepared
FWE=1 ?
No
Yes
Programming/erasing
procedure program is
transferred to the on-chip
RAM and executed
Programming/erasing
end
1. RAM emulation mode must be canceled
in advance. Download cannot be executed
in emulation mode.
2. When the program data is made by means
of emulation, the download destination must be
changed by FTDAR. With the initial setting of
FTDAR (H'00), the download area is
overlapped with the emulation area.
3. Inputting high level to the FWE pin sets the
FWE bit to 1.
4. Programming/erasing is executed only in
the on-chip RAM. However, if the program data
is in a consecutive area and can be accessed
by the MOV.B instruction of the CPU like
SRAM/ROM, the program data can be in an
external space.
5. After programming/erasing is finished, low level
must be input to the FWE pin for protection.
Figure 23.9 Programming/Erasing Overview Flow
Rev. 3.0, 09/04, page 868 of 1086