SH7058 Datasheet, PDF (1042/1130 Pages) Renesas Technology Corp – Renesas SuperHTM RISC engine

27.5 Flash Memory Characteristics
Table 27.20 shows the flash memory characteristics.
Table 27.20 Flash Memory Characteristics
Conditions: V_CC = PLLV_CC = 3.3 V ±0.3 V, PV_CC1 = 5.0 V ±0.5 V/3.3 V ±0.3 V,
PV_CC2 = 5.0 V ±0.5 V, AV_CC = 5.0 V ±0.5 V, AV_ref = 4.5 V to AV_CC,
V_SS = PLLV_SS = AV_SS = 0 V, T_a = –40°C to 125°C.
When PV_CC1 = 3.3 V ±0.3 V, V_CC = PV_CC1.
When writing or erasing on-chip flash memory, T_a = –40°C to 85°C.
Item
Symbol
Min
Typ
Max
Unit
Programming time*¹*²*⁴
t_P
—
3
200
ms/128 bytes
Erase time*¹*³*⁵
t
—
2
20
s/block
E
Reprogramming count
N_WEC
100
—
—
Times
Notes: 1. Use the on-chip programming/erasing routine for programming/erasure.
2. When all 0 are programmed.
3. 128 kbytes of block
4. The total reprogramming time (programming time + erasing time) is as follows.
40 s (typ.), reference value: 60 s, 80 s (max.)
However, 90% of the values are within the reference value.
5. t_P, t_E distributes focusing on near the typ. value.
Rev. 3.0, 09/04, page 1001 of 1086