PIC18LF24K Datasheet, PDF (542/594 Pages) –

PIC18(L)F26/45/46K40
TABLE 37-5: MEMORY PROGRAMMING SPECIFICATIONS
Standard Operating Conditions (unless otherwise stated)
Param
No.
Sym.
Characteristic
Data EEPROM Memory Specifications
MEM20 E_D
DataEE Byte Endurance
MEM21 T_{D_RET} Characteristic Retention
MEM22 N_{D_REF} Total Erase/Write Cycles before
Refresh
MEM23 V_{D_RW} VDD for Read or Erase/Write
operation
MEM24 T_{D_BEW} Byte Erase and Write Cycle Time
Program Flash Memory Specifications
MEM30 E_P
Flash Memory Cell Endurance
MEM32 T_{P_RET} Characteristic Retention
Min.
Typ† Max. Units
Conditions
100k
—
1M
500k
VDDMIN
—
—
—
E/W -40C  TA  +85C
40
—
Year
Provided no other
specifications are violated
10M
—
—
—
E/W
-40C  TA  +60C
-40C  TA  +85C
—
VDDMAX
V
4.0
5.0
ms
10k
—
—
E/W
-40C  TA  +85C
(Note 1)
Provided no other
—
40
—
Year _{specifications are violated}
MEM33 V_{P_RD} VDD for Read operation
VDDMIN
—
VDDMAX
V
MEM34 V_{P_REW} VDD for Row Erase or Write
operation
VDDMIN
—
VDDMAX
V
MEM35 T_{P_REW} Self-Timed Row Erase or Self-Timed
Write
—
2.0
2.5
ms
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed
Write.
 2016 Microchip Technology Inc.
Preliminary
DS40001816C-page 542