SH7047 Datasheet, PDF (689/764 Pages) Renesas Technology Corp – Renesas 32-Bit RISC Microcomputer SuperHTMRISC engine Family/SH7000 Series

Item
Symbol
Min
Typ Max Unit Remarks Item
Erase
Wait time after ESU bit clear*¹
t_cesu
Wait time after EV bit setting*¹
t_sev
Wait time after H'FF dummy write*¹ t_sevr
Wait time after EV bit clear*¹
t_cev
Wait time after SWE bit clear*¹
t_cswe
Maximum erase count*^1, *⁵
N
10 10 — µs
20 20 — µs
2
2
— µs
4
4
— µs
100 100 — µs
12 — 120 Times
Notes: 1. Make each time setting in accordance with the program/program-verify algorithm or
erase/erase-verify algorithm.
2. Programming time per 128 bytes (shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
3. 1-Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does
not include the erase verification time.)
4. To specify the maximum programming time value (t_p (max)) in the 128-bytes
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
t = 30 µs
sp30
Programming counter (n) = 7 to 1000: t_sp200 = 200 µs
[In additional programming]
Programming counter (n) = 1 to 6:
t = 10 µs
sp10
5. For the maximum erase time (t (max)), the following relationship applies between the
E
wait time after E bit setting (t ) and the maximum erase count (N):
se
t_E(max) = Wait time after E bit setting (t_se) x maximum erase count (N)
To set the maximum erase time, the values of (t_se) and (N) should be set so as to satisfy
the above formula.
Examples: When t = 100 ms, N = 12 times
se
When t = 10 ms, N = 120 times
se
6. See page 2 for correspondence of the standard product, wide temperature-range
product, and product model name.
7. All characteristics after rewriting are guaranteed up to this minimum rewriting times
(therefore 1 to min. times).
8. Reference value at 25°C (A rough rewriting target number to which a rewriting usually
functions)
9. Data retention characteristics when rewriting is executed within the specification values
including minimum values.
Rev. 2.00, 09/04, page 649 of 720