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HD6432345 Datasheet, PDF (657/907 Pages) Hitachi Semiconductor – H8S/2345 F-ZTAT Hardware Manual
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20.1.6 Flash Memory Characteristics
Table 20.10 lists the flash memory characteristics.
Table 20.10 Flash Memory Characteristics (1)
Conditions: VCC = AVCC = 4.5 to 5.5 V, VSS = AVSS = 0 V,
Ta = 0 to +75°C (flash memory programming/erase operating temperature range;
regular specifications) Ta = 0 to +85°C (flash memory programming/erase operating
temperature range; wide-range specifications)
Item
Symbol Min Typ Max Unit
Test
Conditions
Programming time*1, *2, *4
tP
— 10 200 ms/
32 bytes
Erase time*1, *3, *5
Number of programmings
Programming Wait time after setting SWE bit*1
Wait time after setting PSU bit*1
Wait time after setting P bit*1, *4
Wait time after clearing P bit*1
Wait time after clearing PSU bit*1
Wait time after setting PV bit*1
Wait time after H'FF dummy write*1
Wait time after clearing PV bit*1
Max. number of programmings*1, *4
Erase
Wait time after setting SWE bit*1
Wait time after setting ESU bit*1
Wait time after setting E bit*1, *6
Wait time after clearing E bit*1
Wait time after clearing ESU bit*1
Wait time after setting EV bit*1
Wait time after H'FF dummy write*1
Wait time after clearing EV bit*1
Max. number of erases*1, *5
tE
NWEC
x
y
z
α
β
γ
ε
η
N
x
y
z
α
β
γ
ε
η
N
— 100 1200 ms/block
— — 100 Times
10 — — µs
50 — — µs
150 — 200 µs
10 — — µs
10 — — µs
4
— — µs
2
— — µs
4
— — µs
—
—
1000*5 Times z = 200 µs
10 — — µs
200 — — µs
5
— 10 µs
10 — — µs
10 — — µs
20 — — µs
2
— — µs
5
— — µs
120 — 240 Times
Notes: 1. Time settings should be made in accordance with the programming/erase algorithm.
2. Programming time per 32 bytes. (Indicates the total time the P bit in the flash memory
control register (FLMCR1) is set. The program verification time is not included.)
3. Time to erase one block. (Indicates the total time the E bit in FLMCR1 is set. The erase
verification time is not included.)
4. Write time maximum value (tP (max.) = wait time after P bit setting (z) × maximum
number of programmings (N)).
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