HD6432345 Datasheet, PDF (617/907 Pages) Hitachi Semiconductor – H8S/2345 F-ZTAT Hardware Manual

Do not perform additional programming. Erase the memory before reprogramming. In on-
board programming, perform only one programming operation on a 32-byte programming unit
block. In writer mode, too, perform only one programming operation on a 128-byte programming
unit block. Programming should be carried out with the entire programming unit block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming. Touching either of these can
cause contact faults and write errors.
Programming
and erase
Wait time: x ^possible
φ
V_CC
FWE
t_OSC1
t_MDS^*3
Min 0 µs
Min 0 µs
MD₂ to MD₀^*1
RES
SWE bit
t_MDS^*3
SWE
set
SWE
clear
Flash memory access disabled period
(x: Wait time after SWE setting)^*2
Flash memory reprogrammable period
(Flash memory program execution and data read, other than verify, are disabled.)
Notes: 1. Always fix the level by pulling down or pulling up the mode pins (MD2 to MD0) until
powering off, except for mode switching.
2. See section 20.1.6 Flash Memory Characteristics.
3. Mode programming setup time tMDS.
Figure 17.36 Powering On/Off Timing (Boot Mode)
605