HD6432345 Datasheet, PDF (587/907 Pages) Hitachi Semiconductor – H8S/2345 F-ZTAT Hardware Manual

17.9 Programming/Erasing Flash Memory
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transitions to these modes can be made by
setting the PSU and ESU bits in FLMCR2, and the P, E, PV, and EV bits in FLMCR1. Refer to
figure 17.20 regarding mode transitions using the settings of the bits in FLMCR1 and FLMCR2.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM or external memory.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE, EV, PV, E, and P bits in
FLMCR1, and the ESU and PSU bits in FLMCR2, is executed by a program in flash
memory.
2. When programming or erasing, set FWE to 1 (programming/erasing will not be
executed if FWE = 0).
3. Perform programming in the erased state. Do not perform additional programming on
previously programmed addresses.
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