HD6432345 Datasheet, PDF (572/907 Pages) Hitachi Semiconductor – H8S/2345 F-ZTAT Hardware Manual

17.7 Register Descriptions
17.7.1 Flash Memory Control Register 1 (FLMCR1)
Bit
7
6
5
FWE SWE
—
Initial value —*
0
0
Read/Write R
R/W
—
4
3
2
1
0
—
EV
PV
E
P
0
0
0
0
0
—
R/W R/W R/W R/W
Note: * Determined by the state of the FWE pin.
FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify mode
or erase-verify mode is entered by setting SWE to 1 when FWE = 1. Program mode is entered by
setting SWE to 1 when FWE = 1, then setting the PSU bit in FLMCR2, and finally setting the P
bit. Erase mode is entered by setting SWE to 1 when FWE = 1, then setting the ESU bit in
FLMCR2, and finally setting the E bit. FLMCR1 is initialized by a reset, and in hardware standby
mode and software standby mode. Its initial value is H'80 when a high level is input to the FWE
pin, and H'00 when a low level is input. When on-chip flash memory is disabled (modes 4 and 5),
a read will return H'00, and writes are invalid.
Writes to the SWE bit in FLMCR1 are enabled only when FWE = 1; writes to the EV and PV bits
only when FWE=1 and SWE=1; writes to the E bit only when FWE = 1, SWE = 1, and ESU = 1;
and writes to the P bit only when FWE = 1, SWE = 1, and PSU = 1.
Bit 7—Flash Write Enable Bit (FWE): Sets hardware protection against flash memory
programming/erasing. See section 17.14, Flash Memory Programming and Erasing Precautions,
before using this bit.
Bit 7
FWE
0
1
Description
When a low level is input to the FWE pin (hardware-protected state)
When a high level is input to the FWE pin
560