D12320VF25V Datasheet, PDF (894/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 20 Electrical Characteristics
20.3.6 Flash Memory Characteristics
Table 20.29 Flash Memory Characteristics
Condition B: V_CC = 3.0 V to 3.6 V, AV_CC = 3.0 V to 3.6 V, V_ref = 3.0 V to AV_CC, V_SS = AV_SS =
0 V, T_a = 0°C to +75°C (program/erase operating temperature range: regular
specifications), T_a = 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item
Symbol Min
Typ
Max Unit
Test Conditions
Programming time^{*1 *2 *4}
tP
Erase time^{*1 *3 *4}
tE
—
3
30
ms/128 bytes
—
80
800
ms/4-kbyte
block
—
500
5000 ms/32-kbyte
block
Programming time (total)^{*1 *2 *4} ∑tP
Erase time (total)^{*1 *2 *4}
∑tE
—
1000 10000 ms/64-kbyte
block
—
10
30
s/512 kbytes Ta = 25°C when all
cleared to 0
—
10
30
s/512 kbytes Ta = 25°C
Programming and erase time ∑tPE
—
20
60
s/512 kbytes
(total)^{*1 *2 *4}
Number of overwrites
NWEC 100^*3 10000^*5 —
Times
Data retention time ^*4
tDRP
10
—
—
Years
Notes: 1. The exact programming and erase times depend on the characteristics of the data.
2. Programming and erase times do not include data transfer time.
3. This is the minimum number of rewrites after which all characteristics are guaranteed.
(The guaranteed range is 1 to minimum.)
4. This characteristic applies when the number of rewrites is within the specification range,
including minimum values.
5. Reference value for 25°C (as a guideline, rewriting should normally function up to this
value).
Rev.7.00 Feb. 14, 2007 page 860 of 1108
REJ09B0089-0700