D12320VF25V Datasheet, PDF (780/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 17 ROM
4. Monitoring runaway by WDT
Unlike the conventional F-ZTAT H8S microcomputer, no countermeasures are available for a
runaway by WDT during programming/erasing by the downloaded on-chip program.
Prepare countermeasures (e.g. use of the user branch routine and periodic timer interrupts) for
WDT while taking the programming/erasing time into consideration as required.
17.28 PROM Mode
Along with its on-board programming mode, this LSI also has a PROM mode as a further mode
for the writing and erasing of programs and data. In the PROM mode, a general-purpose PROM
programmer can freely be used to write programs to the on-chip ROM. Program/erase is possible
on the user MAT and user boot MAT. The PROM programmer must support Renesas Technology
microcomputers with 512-kbyte flash memory units as a device type.
A status-polling system is adopted for operation in automatic program, automatic erase, and
status-read modes. In the status-read mode, details of the system's internal signals are output after
execution of automatic programming or automatic erasure. In the PROM mode, provide a 12-MHz
input-clock signal.
Table 17.56 PROM Mode Pins
Pin Names
Mode pins: MD2, MD1, MD0
Mode setting pins: PF2, PF1, PF0
STBY pin
RES pin
XTAL, EXTAL pins
Other pins requiring setting: P23, P25
Settings/External Circuit Connection
Low level input to MD2, MD1, and MD0
High level input to PF2, low level input to PF1 and PF0
High-level input (do not select hardware standby mode)
Reset circuit
Oscillator circuit
High-level input to P23, low-level input to P25
Rev.7.00 Feb. 14, 2007 page 746 of 1108
REJ09B0089-0700