D12320VF25V Datasheet, PDF (720/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 17 ROM
17.22 Overview of Flash Memory (H8S/2319C 0.18µm F-ZTAT)
17.22.1 Features
This LSI has an on-chip 512-kbyte flash memory. The flash memory has the following features.
• Two flash-memory MATs according to LSI initiation mode
The on-chip flash memory has two memory spaces in the same address space (hereafter
referred to as memory MATs). The mode setting in the initiation determines which memory
MAT is initiated first. The MAT can be switched by using the bank-switching method after
initiation.
⎯ The user memory MAT is initiated at a power-on reset in user mode: 512 kbytes
⎯ The user boot memory MAT is initiated at a power-on reset in user boot mode: 8 kbytes
• On-board programming modes
⎯ Boot mode
This mode is a program mode that uses an on-chip SCI interface. The user MAT and user
boot MAT can be programmed. This mode can automatically adjust the bit rate between
host and this LSI.
⎯ User program mode
The user MAT can be programmed by using the optional interface.
⎯ User boot mode
The user boot program of the optional interface can be made and the user MAT can be
programmed.
• PROM mode
This mode uses the PROM programmer. The user MAT and user boot MAT can be
programmed.
• Programming/erasing interface by the download of on-chip program
This LSI has a dedicated programming/erasing program. After downloading this program to
the on-chip RAM, programming/erasing can be performed by setting the argument parameter.
• Emulation function of flash memory by using the on-chip RAM
As flash memory is overlapped with part of the on-chip RAM, the flash memory programming
can be emulated in real time.
• Protection modes
There are three protection modes: software protection by the register setting, hardware
protection by reset/hardware standby, and error protection. The protection state for flash
memory programming/erasing can be set.
Rev.7.00 Feb. 14, 2007 page 686 of 1108
REJ09B0089-0700