D12320VF25V Datasheet, PDF (853/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 20 Electrical Characteristics
Item
Symbol Min
Typ
Test
Max
Unit Conditions
Input pull-up Ports A to E
–Ip
10
—
MOS current
300
μA Vin = 0V
Input
RES
capacitance _NMI
Cin
—
—
—
—
30
pF Vin = 0 V
30
pF f = 1 MHz
All input pins
—
except RES and
NMI
Current
Normal operation ICC^*4
—
dissipation^*2
—
15
35 (3.0 V) 80
50 (3.3 V) 100
pF Ta = 25°C
mA f = 20 MHz
mA f = 25 MHz
Sleep mode
—
25 (3.0 V) 64
mA f = 20 MHz
Standby mode^*3
35 (3.3 V) 80
—
0.01
10
—
—
80
mA f = 25 MHz
μA Ta ≤ 50°C
μA 50°C < Ta
Analog
During A/D and AICC
—
0.2
2.0
mA
power
D/A conversion
(3.0 V)
supply
Idle
voltage
—
0.01
5.0
μA
Reference During A/D and AICC
—
1.4
3.0
mA
power
D/A conversion
(3.0 V)
supply
Idle
voltage
—
0.01
5.0
μA
RAM standby voltage
VRAM
2.0
—
—
V
Notes: 1. If the A/D and D/A converters are not used, do not leave the AVCC, Vref, and AVSS
pins open. Connect the AVCC and Vref pins to VCC, and the AVSS pin to VSS.
2. Current dissipation values are for VIH min = VCC – 0.2 V and VIL max = 0.2 V with all output
pins unloaded and all MOS input pull-ups in the off state.
3. The values are for VRAM ≤ VCC < 2.7 V, VIH min = VCC × 0.9, and VIL max = 0.3 V.
4. ICC depends on VCC and f as follows:
ICC max = 1.0 (mA) + 1.10 (mA/(MHz × V)) × VCC × f (normal operation)
ICC max = 1.0 (mA) + 0.88 (mA/(MHz × V)) × VCC × f (sleep mode)
Rev.7.00 Feb. 14, 2007 page 819 of 1108
REJ09B0089-0700