D12320VF25V Datasheet, PDF (884/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 20 Electrical Characteristics
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes. (In the H8S/2318, H8S/2317, H8S/2315, and
H8S/2314, indicates the total time during which the P bit in flash memory control
register 1 (FLMCR1) is set. In the H8S/2319, indicates the total time during which the
P1 bit and P2 bit in the flash memory control registers (FLMCR1, FLMCR2) are set.
Does not include the program-verify time.)
3. Time to erase one block. (In the H8S/2318, H8S/2317, H8S/2315, and H8S/2314,
indicates the total time during which during which the E1 bit in FLMCR1 and the E2 bit
in FLMCR2 are set. Does not include the erase-verify time.)
4. Maximum programming time
N
t_P(max)
=
Σ
i=1
wait
time
after
P
bit
setting
(z)
5. The maximum number of writes (N) should be set as shown below according to the
actual set value of z so as not to exceed the maximum programming time (tP(max)).
The wait time after P bit setting (z) should be changed as follows according to the
number of writes (n).
Number of writes (n)
1≤n≤6
z = 30 μs
7 ≤ n ≤ 1000 z = 200 μs
[In additional programming]
Number of writes (n)
1≤n≤6
z = 10 μs
6. For the maximum erase time (tE(max)), the following relationship applies between the
wait time after E bit setting (z) and the maximum number of erases (N):
tE(max) = Wait time after E bit setting (z) × maximum number of erases (N)
7. Minimum number of times for which all characteristics are guaranteed after rewriting
(Guarantee range is 1 to minimum value).
8. Reference value for 25°C (as a guideline, rewriting should normally function up to this
value).
9. Data retention characteristic when rewriting is performed within the specification range,
including the minimum value.
Rev.7.00 Feb. 14, 2007 page 850 of 1108
REJ09B0089-0700