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D12320VF25V Datasheet, PDF (708/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents
Section 17 ROM
Table 17.37 AC Characteristics in Memory Read Mode
Conditions: VCC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Symbol
tnxtc
tceh
tces
tdh
tds
twep
tr
tf
Min
20
0
0
50
50
70
—
—
Max
—
—
—
—
—
—
30
30
Unit
μs
ns
ns
ns
ns
ns
ns
ns
A18 to A0
Command write
Memory read mode
Address stable
CE
OE
WE
Data
twep tceh
tnxtc
tces
tf
tr
H'00
tdh
tds
Data
Note: Data is latched at the rising edge of WE.
Figure 17.52 Memory Read Mode Timing Waveforms after Command Write
Rev.7.00 Feb. 14, 2007 page 674 of 1108
REJ09B0089-0700