D12320VF25V Datasheet, PDF (883/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 20 Electrical Characteristics
20.2.6 Flash Memory Characteristics
Table 20.19 Flash Memory Characteristics
Condition B: V_CC = 3.0 V to 3.6 V, AV_CC = 3.0 V to 3.6 V, V_ref = 3.0 V to AV_CC, V_SS = AV_SS =
0 V, T_a = 0°C to +75°C (program/erase operating temperature range: regular
specifications), T_a = 0°C to +85°C (program/erase operating temperature range:
wide-range specifications)
Item
Programming time^{*1 *2 *4}
Erase time^{*1 *3 *6}
Reprogramming count
Data retention time^*9
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
Symbol
tP
tE
NWEC
tDRP
x
y
z (z1)
(z2)
(z3)
Erasing
Wait time after P bit clearing^*1
α
Wait time after PSU bit clearing^*1 β
Wait time after PV bit setting^*1
γ
Wait time after H'FF dummy write^*1 ε
Wait time after PV bit clearing^*1
η
Wait time after SWE bit clearing^*1 θ
Maximum number of writes^{*1 *4}
N
Wait time after SWE bit setting^*1 x
Wait time after ESU bit setting^*1 y
Wait time after E bit setting^{*1 *6}
z
Wait time after E bit clearing^*1
α
Wait time after ESU bit clearing^*1 β
Wait time after EV bit setting^*1
γ
Wait time after H'FF dummy write^*1 ε
Wait time after EV bit clearing^*1
η
Wait time after SWE bit clearing^*1 θ
Maximum number of erases^{*1 *6} N
Min Typ Max Unit
Test
Conditions
— 10
200 ms/
128 bytes
— 50
1000 ms/block
100^*7 10000^*8 —
Times
10 —
— Years
1
—
— μs
50 —
— μs
——
30 μs
1≤n≤6
——
200 μs
7 ≤ n ≤ 1000
——
10 μs
Additional-
program-
ming time
wait
5
—
— μs
5
—
— μs
4
—
— μs
2
—
— μs
2
—
— μs
100 —
——
— μs
1000^*5 Times
1
—
— μs
100 —
— μs
——
10 μs
10 —
— μs
10 —
— μs
20 —
— μs
2
—
— μs
4
—
— μs
100 —
— μs
——
100 Times
Rev.7.00 Feb. 14, 2007 page 849 of 1108
REJ09B0089-0700