D12320VF25V Datasheet, PDF (713/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 17 ROM
17.20.6 Auto-Erase Mode
• Auto-erase mode supports only total memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O₆. Alternatively, status read mode can also
be used for this purpose (the I/O₇ status polling pin is used to identify the end of an auto-erase
operation).
• Status polling I/O₆ and I/O₇ pin information is retained until the next command write. As long
as the next command write has not been performed, reading is possible by enabling CE and
OE.
AC Characteristics
Table 17.41 AC Characteristics in Auto-Erase Mode
Conditions: V_CC = 3.3 V ±0.3 V, V_SS = 0 V, T_a = 25°C ±5°C
Item
Symbol
Min
Command write cycle
tnxtc
20
CE hold time
tceh
0
CE setup time
tces
0
Data hold time
tdh
50
Data setup time
tds
50
Write pulse width
twep
70
Status polling start time
tests
1
Status polling access time tspa
—
Memory erase time
terase
100
WE rise time
tr
—
WE fall time
tf
—
Max
Unit
—
μs
—
ns
—
ns
—
ns
—
ns
—
ns
—
ms
150
ns
40000
ms
30
ns
30
ns
Rev.7.00 Feb. 14, 2007 page 679 of 1108
REJ09B0089-0700