D12320VF25V Datasheet, PDF (659/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 17 ROM
However, the RAM area overlapping flash memory space can be read and written to regardless of
whether the SWE bit is set or cleared.
Do not use interrupts while flash memory is being programmed or erased: All interrupt
requests, including NMI, should be disabled during FWE application to give priority to
program/erase operations.
Do not perform additional programming. Erase the memory before reprogramming: In on-
board programming, perform only one programming operation on a 128-byte programming unit
block. In PROM mode, too, perform only one programming operation on a 128-byte programming
unit block. Programming should be carried out with the entire programming unit block erased.
Before programming, check that the chip is correctly mounted in the PROM programmer:
Overcurrent damage to the device can result if the index marks on the PROM programmer socket,
socket adapter, and chip are not correctly aligned.
Do not touch the socket adapter or chip during programming: Touching either of these can
cause contact faults and write errors.
Rev.7.00 Feb. 14, 2007 page 625 of 1108
REJ09B0089-0700