D12320VF25V Datasheet, PDF (815/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

17.29.2 AC Characteristics and Timing in PROM Mode
Table 17.65 AC Characteristics in Memory Read Mode
Condition: V_CC = 3.3 V ± 0.3 V, V_SS = 0 V, T_a = 25˚C ± 5˚C
Code
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
WE rise time
WE fall time
Symbol
tnxtc
tceh
tces
tdh
tds
twep
tr
tf
Min
20
0
0
50
50
70
—
—
Section 17 ROM
Max
Unit
—
μs
—
ns
—
ns
—
ns
—
ns
—
ns
30
ns
30
ns
A18-0
CE
OE
WE
I/O7-0
Command write
t_ces
t_ceh
t_nxtc
t_wep
tf
tr
t_ds
t_dh
Memory read mode
Address stable
Note : Data is latched at the rising edge of WE.
Figure 17.88 Memory Read Timing after Command Write
Rev.7.00 Feb. 14, 2007 page 781 of 1108
REJ09B0089-0700