D12320VF25V Datasheet, PDF (784/1146 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 17 ROM
Table 17.58 Commands in PROM Mode
Command
Memory
Number MAT to be
1st Cycle
of Cycles Accessed Mode Address Data
2nd Cycle
Mode Address Data
Memory-read 1+n
mode
User MAT Write X
User boot Write X
MAT
H'00
H'05
Read RA
Dout
Auto-program 129
mode
User MAT Write X
User boot Write X
MAT
H'40 Write WA
Din
H'45
Auto-erase 2
mode
User MAT Write X
User boot Write X
MAT
H'20
H'25
Write X
H'20
H'25
Status-read 2
mode
Common to Write X
both MATs
H'71 Write X
H'71
Notes: 1. In auto-program mode, 129 cycles are required in command writing because of the
simultaneous 128-byte write.
2. In memory read mode, the number of cycles varies with the number of address writing
cycles (n).
17.28.3 Memory-Read Mode
(1) On completion of an automatic program, automatic erase, or status read, the LSI enters a
command waiting state. So, to read the contents of memory after these operations, issue the
command to change the mode to the memory-read mode before reading from the memory.
(2) In memory-read mode, the writing of commands is possible in the same way as in the
command-write state.
(3) After entering memory-read mode, continuous reading is possible.
(4) After power has first been supplied, the LSI enters the memory-read mode. For the AC
characteristics in memory read mode, see section 17.29.2, AC Characteristics and Timing in
PROM Mode.
Rev.7.00 Feb. 14, 2007 page 750 of 1108
REJ09B0089-0700